Results and discussion Figure 1 shows the surface images of as-received and etched STO substrates taken by an atomic force microscope (AFM). It can be clearly seen that the STO surface varies from smooth for as-received to rough for etched. The surface roughness of as-received STO substrates is about 1 nm, while the etched STO surface is full of pits or trenches

with a surface roughness of around 20 nm. Although some reports show that the surface of HF-etched PX-478 nmr STO is atomically flat with Ti-terminated surface since Sr atom is much more sensitive to HF attack than Ti atom [14], the etched STO surface in the buy Captisol present case is full of pits or trenches. The STO used in this work may not be a perfect single crystal and is assumed to be made up of nanograins [15]. The HF solution permeates into the grain boundaries and dissolves Sr atoms on the lateral sides. As etching proceeds, the grains shrink and the grain boundaries widen in size, leading to the appearance of pits or trenches. The tilted angles of pits or trenches

from the surface are estimated from AFM to be 56.4°, 41.8°, and 64.0° on etched (001), (011), and (111) STO substrates, respectively. The pits and/or trenches may serve as patterned substrates to control the growth direction of ZnO films, which is essentially important for practical applications. Figure 1 AFM images (10 × 10 μm 2 ).The as-received (a, c, e) and etched (b, d, f) (001) (a, b), (011) (c, d), and (111) (e, f) STO substrates. H 89 ic50 X-ray θ-2θ and Ф scans were performed to identify the out-of-plane and in-plane orientation relationships between the films and

substrates. In a Ф scan, the number of peaks corresponds to the number of planes for a particular family that possesses the same angle χ (0°< χ < 90°) with the crystal surface, while the separation between peaks correlates with the angular separation between the corresponding projections of the normals to the scanning family onto the crystal surface. The Ф angles of the ZnO films are respectively Rebamipide corrected by the Ф scan of the STO substrates. It can be seen from Figure 2a that ZnO films show nonpolar (1120) and polar (0001) orientations on as-received and etched (001) STO substrates, respectively. We first discuss the epitaxial relationship of (1120) ZnO on as-received (001) STO. Several groups have obtained (1120) ZnO epitaxial films on (001) STO, but suppose one-, two-, or four-domain epitaxy [7–9, 16]. In order to clarify the epitaxial relationship of (1120)ZnO/(001) STO in the present work, we performed the Ф scans of ZnO 1010 and STO 112 families, as shown in Figure 2b. In single crystal (1120) ZnO, only two crystal planes in the ZnO 1010 family have the same angle with the surface (χ = 30°), and two peaks separated by 180° are expected in ZnO 1010 Ф patterns, which is just the case in single-domain (1120) ZnO on r-sapphire [17].