Phys Rev B 2005, 72:205311–205322.CrossRef 6. Lixin H, Gabriel B, Alex Z: Compressive strain-induced interfacial hole localization in self-assembled CH5183284 research buy quantum dots: InAs/GaAs versus tensile InAs/InSb. Phys Rev B 2004, 70:235316–235325.CrossRef 7. Tutu FK, Wu J, Lam
P, Tang M, Miyashita N, Okada Y, Wilson J, Allison R, Liu H: Antimony mediated growth of high-density InAs quantum dots for photovoltaic cells. Appl Phys Lett 2013, 103:043901.CrossRef 8. Fafard S, Hinzer K, Raymond S, Dion M, McCaffrey J, Feng Y, Charbonneau S: Red-emitting semiconductor quantum dot lasers. Science 1996, 274:1350–1353.CrossRef 9. Kamath K, Bhattacharya P, Sosnowski T, Norris T: Room-temperature operation of In 0.4 Ga 0.6 As/GaAs self-organised quantum dot lasers. Electron Lett 1996, 32:1374–1375.CrossRef 10. Maimon S, Finkman E, Bahir G, Schacham SE: Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors. Appl learn more find more Phys Lett 1998,
73:2003–2005.CrossRef 11. Chakrabarti S, Stiff-Roberts AD, Bhattacharya P, Gunapala S: High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity. Photos Tech Lett 2004, 16:1361–1363.CrossRef 12. Wu J, Shao D, Dorogan VG, Li AZ, Li S, DeCuir EA, Manasreh MO, Wang ZM, Mazur YI, Salamo GJ: Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxy. Nano Lett 2010, 10:1512.CrossRef much 13. Matsuura T, Miyamoto T, Ohta M, Koyama F: Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE. Phys
Status Solidi C 2006, 3:516–519.CrossRef 14. Liu HY, Steer MJ, Badcock TJ, Mowbray DJ, Skolnick MS, Navaretti P, Groom KM, Hopkinson M, Hogg RA: Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer. Appl Phys Lett 2005, 86:143108–143110.CrossRef 15. Ripalda JM, Granados D, González Y, Sánchez AM, Molina SI, García JM: Room temperature emission at 1.6 μm from InGaAs quantum dots capped with GaAsSb. Appl Phys Lett 2005, 87:202108–202110.CrossRef 16. Liu HY, Steer MJ, Badcock TJ, Mowbray DJ, Skolnick MS, Suarez F, Ng JS, Hopkinson M, David JPR: Room-temperature 1.6 μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer. J Appl Phys 2006, 99:046104–046107.CrossRef 17. Ulloa JM, Gargallo-Caballero R, Bozkurt M, Moral M, Guzmán A, Koenraad PM, Hierro A: GaAsSb-capped InAs quantum dots: from enlarged quantum dot height to alloy fluctuations. Phys Rev B 2010, 81:165305–1-165305–7.CrossRef 18. Bozkurt M, Ulloa JM, Koenraad PM: An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs. Semicond Sci Tech 2011, 26:064007–064017.CrossRef 19. Bray T, Zhao Y, Reece P, Bremner SP: Photoluminescence of antimony sprayed indium arsenide quantum dots for novel photovoltaic devices.